Random access memory cell

Details Random access memory cell Random access memory cell

1981-02-24

1983-06-07

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365156, G11C 1140

Patent

active

043874452

ABSTRACT:
Two memory cells each can be entirely fabricated in only two isolation beds. In one embodiment each bed contains one lateral PNP and one vertical NPN transistor in a merged structure. In a second embodiment, each bed contains one lateral PNP and two vertical NPN transistors in a merged structure. Memory access circuitry provides a high ratio of selected to unselected cell current in order to permit fast memory operation.

REFERENCES:
patent: 3535699 (1970-10-01), Gaensslen et al.
patent: 3643235 (1972-02-01), Berger et al.
patent: 3781828 (1973-12-01), Platt et al.
patent: 3815106 (1974-06-01), Wiedmann
patent: 3909807 (1975-09-01), Fulton
patent: 4021786 (1977-05-01), Peterson
patent: 4023148 (1977-05-01), Heuber et al.
patent: 4032902 (1977-06-01), Herndon
patent: 4081697 (1978-03-01), Nakano
patent: 4122542 (1978-10-01), Camerik et al.
patent: 4144586 (1979-03-01), Aungs et al.
Farley et al., "Integrated Static SCR Memory Cell", IBM Technical Disclosure Bulletin, vol. 22, No. 1, Jun. 1979, pp. 135-136.
Boudon et al., "Fast-Read Reference Scheme for Multi-Emitter (Harper) Cell", IBM Technical Disclosure Bulletin, vol. 21, No. 4, Sep. 1978, pp. 1476-1478.
Dorler et al., "Lateral PNP Design for Memory Cell", IBM Technical Diclosure Bulletin, vol. 17, No. 6, Nov. 1974, pp. 1619-1620.
Dorler et al., "Complementary Transistor Switch Memory Cell", IBM Technical Disclosure Bulletin, vol. 16, No. 12, May 1974, pp. 3931-3932.
Gaensslen, "Complementary Four Device FET Memory Cell", IBM Technical Disclosure Bulletin, vol. 13, No. 12, May 1971, pp. 3614-3615.
Dorler et al., "AC Write Scheme for Bipolar Random-Access Memories Using Schottky Coupled Cells", IBM Technical Diclosure Bulletin, vol. 23, No. 11, Apr. 1981, pp. 4960-4962.

Affiliated with

Also associated with

Rating

Random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Random access memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2346239