Random access memory

Details Random access memory Random access memory

1976-05-26

1978-04-18

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Noise suppression

307238, 365203, G11C 702

Patent

active

040854582

ABSTRACT:
In a n-channel (or p-channel) random access memory in which a plurality of memory cells are arranged in a matrix form in a p-type (or n-type) semiconductor substrate, clamping MOSFET's are connected between word lines provided for the associated rows of memory cells of the matrix and a reference potential to which gates the source electrodes of the information storing MOSFET's of the memory cells are connected. The clamping MOSFET has a lower threshold voltage than a row selecting MOSFET connected to the word line and clamps the word line when the word line is not selected, so that a delay in the read-out operation is eliminated or suppressed.

REFERENCES:
patent: 3980899 (1976-09-01), Shimada et al.

Affiliated with

Also associated with

Rating

Random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2149891