Ramped oxide formation method

Details Ramped oxide formation method Ramped oxide formation method

1989-05-30

1992-06-23

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156600, 156605, 156DIG64, 156DIG73, 437238, 437239, C30B 3116

Patent

active

051239949

ABSTRACT:
A method for forming high quality oxides wherein semiconductor material is placed in an oxidizing environment and subjected to a predetermined concentration of oxygen. This oxygen concentration is increased over time until a predetermined amount of oxide has been formed. Once the predetermined amount of oxide has been formed, the semiconductor material/oxide interface is subjected to a burst of steam that passivates the interface thereby reducing the number of unreacted semiconductor material atoms.

REFERENCES:
patent: 4154873 (1979-05-01), Hickox et al.
patent: 4167915 (1979-09-01), Toole et al.
patent: 4275093 (1981-06-01), Sasaki et al.
patent: 4380865 (1983-04-01), Frye et al.
patent: 4518630 (1985-05-01), Grasser
patent: 4540452 (1985-09-01), Croset et al.
patent: 4731343 (1988-03-01), Beinvogel
patent: 4789560 (1988-12-01), Yen
Ghandhi, "VLSI Fabrication Principles, Silicon and Gallium Arsenide", John Wiley and Sons, New York, 1983, pp. 385-388.

Affiliated with

Also associated with

Rating

Ramped oxide formation method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ramped oxide formation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ramped oxide formation method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-930783