Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1994-12-28
1996-12-03
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
3652257, 365 96, G11C 1140
Patent
active
055815057
ABSTRACT:
An integrated circuit memory which includes at least some RAM/ROM hybrid columns. The RAM/ROM hybrid cells operate as normal SRAM cells forever, unless and until they are programmed to operate as ROM cells. Thus users who need the extra security permitted by ROM encoding can have this capability, while users who do not need ROM encoding can use off-the-shelf parts as RAM only.
REFERENCES:
patent: 4584669 (1986-04-01), Moynihan et al.
patent: 4616343 (1986-10-01), Ogawa
patent: 4995004 (1991-02-01), Lee
Dallas Semiconductor Corp.
Popek Joseph A.
LandOfFree
Ram/ROM hybrid memory architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ram/ROM hybrid memory architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ram/ROM hybrid memory architecture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-791067