Ram cell capable of storing 3 logic states

Details Ram cell capable of storing 3 logic states Ram cell capable of storing 3 logic states

1996-12-23

1998-12-08

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Flip-flop

36523005, 365156, G11C 1100

Patent

active

058479902

ABSTRACT:
A memory circuit which enables storage of three logic states in a memory cell. Since the additional logic states may be used to represent additional information bits, this memory circuit increases the number of bits that may be stored per memory cell, thereby increasing the storage density and reducing the cost per bit. The disclosed memory circuit comprises an analog-to-digital converter coupled to detect a current through a transistor in a memory cell. The current is determined by the state of a tri-state flip-flop. By enabling the current to be detected as positive, negative, or zero, it becomes possible to represent more than one bit of information with the state of the flip-flop.

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