Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-20
1998-06-02
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257383, 257413, 257755, 257768, H01L 2978
Patent
active
057604517
ABSTRACT:
A contact for a semiconductor device is provided by depositing a layer of palladium on a silicon substrate, causing the palladium to react with the substrate for forming palladium silicide, removing unreacted palladium from the substrate, forming doped silicon on the palladium silicide and substrate, causing the silicon to be transported through the palladium silicide for recrystallizing on the substrate for forming epitaxially recrystallized silicon regions on the substrate and lifting the palladium silicide above the epitaxially recrystallized silicon regions for forming a silicided contact therefor, and removing the doped silicon from the substrate.
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Hardy David B.
International Business Machines - Corporation
Mortinger Alison D.
LandOfFree
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