Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2000-11-08
2008-10-21
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257SE23114, C257S659000, C257S660000
Reexamination Certificate
active
07439621
ABSTRACT:
The RF device of the present invention includes: a semiconductor substrate; and first and second semiconductor components provided on the substrate. Each of the components includes source electrodes, a gate electrode and a drain electrode. And multiple through holes, which pass through the substrate in the thickness direction, are opened in a region of the substrate between the two components. To enhance the effect of suppressing electrical interference between the components, a gap between two adjacent ones of the through holes is preferably smaller than the thickness of the substrate.
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Final Decision for U.S. Appl. No. 10/110,481, dated Feb. 21, 2006.
Furukawa Hidetoshi
Ishida Hidetoshi
Miyatsuji Kazuo
Tanaka Tsuyoshi
Ueda Daisuke
Costellia Jeffrey L.
Matsushita Electric - Industrial Co., Ltd.
Nixon & Peabody LLP
Zarneke David A
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