Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-10-31
2000-07-11
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257328, 257334, 257341, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
060876972
ABSTRACT:
A power MOSFET suitable for use in RF applications and a method for making the same is disclosed. The power MOSFET reduces the gate coverage of the drain region of the device in order to decrease the device gate to drain capacitance C.sub.gd. A significant portion of the gate overlaying the drain region is eliminated by the removal of a portion of a polysilicon layer that is disposed over a substantial portion of the drain region that resides between the channel portions of the body regions of the device. The resulting open area, that is subsequently covered by an oxide layer, separates the polysilicon gate electrodes of the device. Finally, a metal layer is deposited over the entire structure to form the gate and source electrodes of the device.
REFERENCES:
patent: 4455565 (1984-06-01), Goodman et al.
patent: 5767550 (1998-06-01), Calafut et al.
patent: 5883412 (1999-03-01), Feria et al.
patent: 5894150 (1999-04-01), Hshieh
Fenty Jesse A.
Galanthay Theodore E.
Jorgenson Lisa K.
Larson Renee M.
Saadat Mahshid
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