Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2007-02-13
2007-02-13
Pascal, Robert (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C343S754000, C330S286000
Reexamination Certificate
active
11134804
ABSTRACT:
A radio frequency amplifier comprising a circuit board having a boundary shaped in the form of an ellipse and two dielectric layers, a first dielectric layer and a second dielectric layer, enclosed by conductive layers. Radio frequency signals are broadcasted from one of the two foci, the first focus, of the elliptically shaped circuit board through the first dielectric layer and separate portions of the signals are collected at the boundary of the first dielectric layer into a plurality of amplifier circuits. The collected portions are amplified separately in the amplifier circuits with radio frequency amplifiers and each of the amplifier circuits provides the same or approximately the same time delay of its collected signal. The amplified signal from each amplifier circuit is then combined with all other amplified signals in the second dielectric layer by broadcasting the amplified signal into the second dielectric layer at the boundary of the second dielectric layer at a location corresponding to the first dielectric layer boundary location at the input to the amplifier circuit. All of the amplified radio frequency signals combine constructively at the second focus of the elliptical circuit board and the output of the amplifier is extracted at this second focus. This structure has the advantages of being broadband, low-loss, and physically simple.
REFERENCES:
patent: 4588962 (1986-05-01), Saito et al.
patent: 5214394 (1993-05-01), Wong
patent: 5256988 (1993-10-01), Izadian
patent: 5329248 (1994-07-01), Izadian
Nguyen Hieu
Pascal Robert
Ross John R.
Trex Enterprises Corp.
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