Radio frequency etch table with biased extension member

Details Radio frequency etch table with biased extension member Radio frequency etch table with biased extension member

1981-11-12

1983-07-12

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192E, C23C 1500

Patent

active

043929389

ABSTRACT:
An RF etch table has a biased extension member positioned adjacent its periphery. The extension member is electrically conductive, but is insulated from other conductive members in the system. The extension member is positioned with respect to the periphery of the table in a manner such that the boundary of the plasma induced above the etch table is continued beyond the periphery of the etch table, thereby eliminating the focusing of ions onto the edges of an item being etched on the table. The potential impressed upon the extension member produces a dark space above its surface having a sufficient height so that the horizontal configuration of the sheath above the etch table is continued beyond its edges. More uniform etching is accomplished.

REFERENCES:
patent: 3730873 (1973-05-01), Pompei et al.
Y. Budo et al., "Ground Shield in RF Sputter Etching", IBM Tech. Disc. Bull., vol. 13, p. 1296, (1970).

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