Radio frequency electron cyclotron resonance plasma etching appa

Details Radio frequency electron cyclotron resonance plasma etching appa Radio frequency electron cyclotron resonance plasma etching appa

1994-01-27

1995-03-28

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 20429831, 118723AN, H01L 2100

Patent

active

054013518

ABSTRACT:
A radio frequency electron cyclotron resonance (RF.multidot.ECR) plasma etching apparatus in which electron cyclotron resonance is caused to occur by radio frequency waves of 100-500 MHz introduced in by an antenna. The antenna is disposed within a plasma-producing chamber and connected to a coaxial cable for introducing the radio frequency waves. A plurality of permanent magnets are provided for producing magnetic fields that perpendicularly intersect electric fields produced around the antenna within the plasma-producing chamber. A process gas forms plasma to the electron cyclotron resonance phenomena resulting from the electric fields generated by the radio frequency waves and the magnetic fields perpendicularly intersecting the electric fields in the plasma-producing chamber. The plasma thus produced is applied to the substrate for etching.

REFERENCES:
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5081398 (1992-01-01), Asmussen et al.
patent: 5280154 (1994-01-01), Cuomo et al.

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