Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-04
2009-02-24
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000, C257S532000, C257S623000, C257S625000, C257S686000, C257SE27016, C257SE27088, C257SE27026, C257SE21614, C257SE21512, C257SE21649
Reexamination Certificate
active
07495276
ABSTRACT:
A radio frequency arrangement is disclosed, having a first semiconductor body with an integrated circuit formed therein and also with first and second terminal locations. A second semiconductor body with a charge store integrated therein and with a first and second contact locations is arranged with its contact locations mutually facing the terminal locations of the first semiconductor body. The first terminal and the first contact location and also the second terminal and the second contact location are coupled to one another in order thus to form an integrated circuit and also a charge store for supplying the integrated circuit. Realizing the integrated circuit and the charge store separately enables a simple and cost-effective manufacturing procedure for the individual components.
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Eschweiler & Associates LLC
Fourson George
Infineon - Technologies AG
LandOfFree
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