Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1991-10-29
1992-11-10
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330294, H03F 134, H03F 3193
Patent
active
051627558
ABSTRACT:
A radio frequency (RF) amplifier circuit includes an input matching network having a first port coupled to an input port of the circuit. The RF amplifier circuit further includes a high electron mobility field effect transistor (HEMT) having source, gate and drain electrodes with the gate electrode coupled to the second port of the input impedance matching network and means, coupled between the source electrode and a DC reference potential, for providing inductive feedback to the source electrode of the HEMT. The RF amplifier circuit further includes an output matching network having a first port coupled to the drain electrode of the HEMT. The output matching network comprises a first RF propagation network having a first end coupled to the first port of the output matching network and a second end coupled to a first electrode of a capacitor. A second electrode of the capacitor is coupled to a second port of the output matching network. The RF amplifier circuit further includes a monolithic microwave integrated circuit amplifier having an input port coupled to the second port of the output matching network and having an output port coupled to an output port of the RF amplifier circuit.
REFERENCES:
Tajima et al., "X, Ku-Band GaAs Monolithic Amplifier", 1982, IEEE MTT-S Digest, pp. 476-478.
Hansen Russell W.
Mara, Jr. John F.
Russell Mark E.
Mofford Donald F.
Mullins James B.
Raytheon Company
Sharkansky Richard M.
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