Radical cleaning arrangement for a lithographic apparatus

Details Radical cleaning arrangement for a lithographic apparatus Radical cleaning arrangement for a lithographic apparatus

2008-11-06

2010-10-12

Kim, Robert (Department: 2881)

Radiant energy

Radiant energy generation and sources

With radiation modifying member

C250S492100, C250S492200, C250S493100

Reexamination Certificate

active

07812330

ABSTRACT:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

REFERENCES:
patent: 5478400 (1995-12-01), Shimizu
patent: 6822251 (2004-11-01), Arenberg et al.
patent: 2003/0231415 (2003-12-01), Puerto
patent: 2004/0051984 (2004-03-01), Oshino et al.
patent: 2004/0065817 (2004-04-01), Singer et al.
patent: 2004/0086434 (2004-05-01), Gadgil et al.
patent: 2004/0165160 (2004-08-01), Van Beek et al.
patent: 2005/0111080 (2005-05-01), Bakker et al.
patent: 2006/0163500 (2006-07-01), Inoue et al.
Lewandowski, et al (“A pulsed, low-temperature beam of supersonically cooled free radical OH molecules” Chemical Physics Letters 395 (2004) 53-57.
Lewandowski, et al. (“A pulsed, low-temperature beam of supersonically cooled free radical OH molecules” Chemical Physics Letters 395 (2004) 53-57).
R. R. Chromik and E.J. Cotts, “A study of the Kinetics and Energetics of Solid State Reactions in Pd/Sn Diffusion Couples”, Department of Physics, Binghamton University, State University of New York, Binghamton, NY 13902-6016.

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