Radical cleaning arrangement for a lithographic apparatus

Details Radical cleaning arrangement for a lithographic apparatus Radical cleaning arrangement for a lithographic apparatus

2005-12-08

2008-12-09

Berman, Jack I. (Department: 2881)

Radiant energy

Radiant energy generation and sources

With radiation modifying member

C250S492100, C250S492200, C250S493100

Reexamination Certificate

active

07462850

ABSTRACT:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.

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