Radiation tolerant SRAM bit

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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Details

C365S189011, C365S189040

Reexamination Certificate

active

11676188

ABSTRACT:
In an integrated circuit, a radiation tolerant static random access memory device comprising a first inverter having an input and an output, a second inverter having an input and an output. A first resistor is coupled between the output of the first inverter and the input of the second inverter. A second resistor is coupled between the output of the second inverter and the input of the first inverter. A first write transistor is coupled to the output of the first inverter and has a gate coupled to a source of a first set of write-control signals and a second write transistor is coupled to the output of the second inverter and has a gate coupled to said source of a second set of write-control signals. Finally, a pass transistor has a gate coupled to the output of on of the first and second inverters.

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European Supplementary Search Report of corresponding European Patent Application No. 04815653.3, dated Jun. 15, 2007, 3 pages.

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