Radiation tolerant SRAM bit

Details Radiation tolerant SRAM bit Radiation tolerant SRAM bit

2007-03-20

2007-03-20

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189011, C365S189040

Reexamination Certificate

active

10752222

ABSTRACT:
In an integrated circuit, a radiation tolerant static random access memory device comprising a first inverter having an input and an output, a second inverter having an input and an output. A first resistor is coupled between the output of the first inverter and the input of the second inverter. A second resistor is coupled between the output of the second inverter and the input of the first inverter. A first write transistor is coupled to the output of the first inverter and has a gate coupled to a source of a first set of write-control signals and a second write transistor is coupled to the output of the second inverter and has a gate coupled to said source of a second set of write-control signals. Finally, a pass transistor has a gate coupled to the output of on of the first and second inverters.

REFERENCES:
patent: 5581198 (1996-12-01), Trimberger
patent: 6111780 (2000-08-01), Bertin
patent: 6147899 (2000-11-01), Chan
patent: 6271568 (2001-08-01), Woodruff et al.
patent: 6324102 (2001-11-01), McCollum
patent: 6822894 (2004-11-01), Costello et al.

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