Radiation tolerant combinational logic cell

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189050

Reexamination Certificate

active

07489538

ABSTRACT:
A system has a reduced sensitivity to Single Event Upset and/or Single Event Transient(s) compared to traditional logic devices. In a particular embodiment, the system includes an input, a logic block, a bias stage, a state machine, and an output. The logic block is coupled to the input. The logic block is for implementing a logic function, receiving a data set via the input, and generating a result f by applying the data set to the logic function. The bias stage is coupled to the logic block. The bias stage is for receiving the result from the logic block and presenting it to the state machine. The state machine is coupled to the bias stage. The state machine is for receiving, via the bias stage, the result generated by the logic block. The state machine is configured to retain a state value for the system. The state value is typically based on the result generated by the logic block. The output is coupled to the state machine. The output is for providing the value stored by the state machine. Some embodiments of the invention produce dual rail outputs Q and Q′. The logic block typically contains combinational logic and is similar, in size and transistor configuration, to a conventional CMOS combinational logic design. However, only a very small portion of the circuits of these embodiments, is sensitive to Single Event Upset and/or Single Event Transients.

REFERENCES:
patent: 4454589 (1984-06-01), Miller
patent: 4783778 (1988-11-01), Finch et al.
patent: 4787057 (1988-11-01), Hammond
patent: 4888774 (1989-12-01), Kosuge et al.
patent: 5111429 (1992-05-01), Whitaker
patent: 5278781 (1994-01-01), Aono et al.
patent: 5398322 (1995-03-01), Marwood
patent: 5406513 (1995-04-01), Canaris et al.
patent: 5673407 (1997-09-01), Poland et al.
patent: 5867414 (1999-02-01), Kao
patent: 6326809 (2001-12-01), Gambles et al.
patent: 6487134 (2002-11-01), Thoma et al.
patent: 6573773 (2003-06-01), Maki et al.
patent: 6583470 (2003-06-01), Maki et al.
patent: 6597745 (2003-07-01), Dowling
patent: 6696873 (2004-02-01), Hazucha et al.
patent: 6725411 (2004-04-01), Gerlach et al.
patent: 6757122 (2004-06-01), Kuznetsov et al.
patent: 6826090 (2004-11-01), Chu et al.
patent: 6826778 (2004-11-01), Bopardikar et al.
patent: 6895547 (2005-05-01), Eleftheriou et al.
patent: 6928602 (2005-08-01), Yamagishi et al.
patent: 7069492 (2006-06-01), Piret
patent: 7111221 (2006-09-01), Birru et al.
patent: 7127653 (2006-10-01), Gorshe
patent: 7162684 (2007-01-01), Hocevar
“Ionizing Radiation Effects in MOS Devices and Circuits”, Edited by T.P. Ma., Department of Electrical Engineering, Yale University, New Haven Connecticut and Paul V. Dressendorfer, Sandia National Laboratories, Albuquerque, NM, A Wiley-Interscience Publication, John Wiley & Sons, pp. 484-589.
“Test Results for SEU and SEL Immune Memory Circuits”, D. Wiseman et al., 5thNASA Symposium on VLSI Design 1993, Nasa Space Engineering Research Center for VLSI System Design, University of New Mexico, 2650 Yale Suite # 101, Albuquerque, New Mexico 87106, pp. 2.6.1-2.6.10.
“Low Power SEU Immune CMOS Memory Circuits”, IEEE Transactions on Nuclear Science, vol. 39, No. 6, Dec. 1992, M. Norley Liu and Sterling Whitaker, NASA Space Engineering Research Center for VLSI System Design, University of Idaho, Moscow. Idaho 83843, pages.
IAC-02-I.8.08, Radiation Effects and Hardening Techniques for Spacecraft System Microelectronics, Jody Gambles and Gary Maki, Center for Advanced Microelectric & Biomolecular Research, University of Idaho Research Park, 721 Lochsa Street, Suite #8, Post Falls, Idaho 83854 USA, 11 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Radiation tolerant combinational logic cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Radiation tolerant combinational logic cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation tolerant combinational logic cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4060451

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.