Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-08-23
2005-08-23
Nguyen, Henry Hung (Department: 2851)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S50400H, C378S119000
Reexamination Certificate
active
06933510
ABSTRACT:
A radiation source unit is provided that includes an anode and a cathode that are configured and arranged to create a discharge in a substance in a space between said anode and cathode and to form a plasma so as to generate electromagnetic radiation. The substance may comprise xenon, indium, lithium, tin or any suitable material. To improve conversion efficiency, the source unit may be constructed to have a low inductance, and operated with a minimum of plasma. To, for example, improve heat dissipation, a fluid circulation system can be created within the source volume and a wick by using a fluid in both its vapor and liquid states. To, for example, prevent contamination from entering a lithographic projection apparatus, the source unit can be constructed to minimize the production of contamination, and a trap can be employed to capture the contamination without interfering with the emitted radiation.
REFERENCES:
patent: 3654567 (1972-04-01), Hodgson
patent: 4247830 (1981-01-01), Karras et al.
patent: 5148440 (1992-09-01), Duncan
patent: 5243638 (1993-09-01), Wang et al.
patent: 5499282 (1996-03-01), Silfvast
patent: 6188076 (2001-02-01), Silfvast et al.
patent: 6389106 (2002-05-01), Neff et al.
patent: 6804327 (2004-10-01), Schriever et al.
patent: 6815700 (2004-11-01), Melnychuk et al.
patent: 2002/0014598 (2002-02-01), Melnychuk et al.
patent: 03256180.5 (2003-12-01), None
Antsiferov Pavel Stanislavovich
Banine Vadim Yevgenyevich
Ivanov Vladimir Vital'Evitch
Korob Evgenil Dmitreevitch
Koshelev Konstantin Nikolaevitch
ASML Netherlands B.V.
Nguyen Henry Hung
Pillsbury Winthrop Shaw & Pittman LLP
LandOfFree
Radiation source, lithographic apparatus, and device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation source, lithographic apparatus, and device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation source, lithographic apparatus, and device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3463899