Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2006-10-18
2008-12-16
Hamilton, Cynthia (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S326000, C430S330000
Reexamination Certificate
active
07465529
ABSTRACT:
A copolymer expressed by the following structural formulawas obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 μm-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.
REFERENCES:
patent: 5071730 (1991-12-01), Allen et al.
patent: 5073474 (1991-12-01), Schwalm et al.
patent: 5077174 (1991-12-01), Bauer et al.
patent: 5102771 (1992-04-01), Vogel et al.
patent: 5230984 (1993-07-01), Tachiki et al.
patent: 5272042 (1993-12-01), Allen et al.
patent: 5279923 (1994-01-01), Hiro et al.
patent: 5360693 (1994-11-01), Sebald et al.
patent: 5384229 (1995-01-01), Pai et al.
patent: 5399647 (1995-03-01), Nozaki et al
patent: 5474872 (1995-12-01), Tomo et al.
patent: 5506088 (1996-04-01), Nozaki et al.
patent: 5563022 (1996-10-01), Binder et al.
patent: 5635332 (1997-06-01), Nakano et al.
patent: 5679495 (1997-10-01), Yamachika et al.
patent: 5738975 (1998-04-01), Nakano et al.
patent: 5851727 (1998-12-01), Choi et al.
patent: 0 366 590 (1990-05-01), None
patent: 0 476 865 (1992-03-01), None
patent: 0 487 261 (1992-05-01), None
patent: 0 516 472 (1992-12-01), None
patent: 0 544 465 (1993-06-01), None
patent: 58-122533 (1983-07-01), None
patent: 62-40450 (1987-02-01), None
patent: 2-18564 (1990-01-01), None
patent: 2-209977 (1990-08-01), None
patent: 2-282746 (1990-11-01), None
patent: 3-192173 (1991-08-01), None
patent: 3-223864 (1991-10-01), None
patent: 3-223865 (1991-10-01), None
patent: 4-26850 (1992-01-01), None
patent: 4-39665 (1992-02-01), None
patent: 4-156548 (1992-05-01), None
patent: 4-211258 (1992-08-01), None
patent: 4-251259 (1992-09-01), None
patent: 4-321049 (1992-11-01), None
patent: 4-347857 (1992-12-01), None
patent: 5-17711 (1993-01-01), None
patent: 5-19479 (1993-01-01), None
patent: 5-39444 (1993-02-01), None
patent: 5-45881 (1993-02-01), None
patent: 5-72738 (1993-03-01), None
patent: 5-80516 (1993-04-01), None
patent: 5-152718 (1993-06-01), None
patent: 5-181279 (1993-07-01), None
patent: 5-216244 (1993-08-01), None
patent: 5-224422 (1993-09-01), None
patent: 5-232705 (1993-09-01), None
patent: 5-247386 (1993-09-01), None
patent: 5-249680 (1993-09-01), None
patent: 5-249682 (1993-09-01), None
patent: 5-257284 (1993-10-01), None
patent: 5-265212 (1993-10-01), None
patent: 5-265214 (1993-10-01), None
patent: 0 574 939 (1993-12-01), None
patent: 5-346668 (1993-12-01), None
patent: 7-28237 (1995-01-01), None
patent: 7-199467 (1995-08-01), None
Taylor et al, “A positive, chemically amplified, aromatic methacrylate resist employing the tetrahydropyranyl protecting group”. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures—Nov. 1991—vol. 9, Issue 6, pp. 3348-3356.
Darling et al ,Dialkyl fumarate copolymers: new photoresist materials for deep- and mid-UV microlithography, Proceedings of SPIE—vol. 2195 Advances in Resist Technology and Processing XI, Omkaram Nalamasu, Editor, May 1994, pp. 285-296.
Dowd et al J..Chem. Soc. Perkin Trns II 1985 (no month given), pp. 413-416.
Otsu et al, Macromolecules, 1993, vol. 26, pp. 3026-3029.
Otsu et al Macromolecules, 1992 no month given pp. 2713-2716.
English translation of JP 05-346668 A generated on Sep. 20, 2007 at AIPN website.
Abstract of RD 337078, Chemical Abstracts, vol. 116, No. 26, Jun. 29, 1992, “Deep UV top Surface Image Resist”, p. 693, col. 1.
Internation Publication No. WO 92/09934, published Jun. 11, 1992.
Kaimoto Yuko
Takahashi Makoto
Takechi Satoshi
Arent & Fox LLP
Fujitsu Limited
Hamilton Cynthia
LandOfFree
Radiation sensitive material and method for forming pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation sensitive material and method for forming pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation sensitive material and method for forming pattern will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4023290