Radiation sensitive material and method for forming pattern

Details Radiation sensitive material and method for forming pattern Radiation sensitive material and method for forming pattern

2007-02-20

2007-02-20

Ashton, Rosemary (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S326000, C430S905000, C430S910000

Reexamination Certificate

active

10833114

ABSTRACT:
A copolymer expressed by the following structural formulawas obtained by loading adamantyl methacrylate monomer and t-butyl acrylate monomer by 1:1, then conducting polymerization, adding AIBN as a polymerization initiator, and then conducting precipitation purification with methanol. Then to the copolymer, triphenylsulfonium hexafluoroantimonate was added to prepare a cyclohexanone solution. This solution was applied to a wafer, and exposed to a KrF excimer stepper and developed. The threshold energy Eth was 50 mJ/cm2. A 0.45 μm-wide L & S was formed at 130 mJ/cm2. The radiation sensitive material has good transparency and etching resistance, high sensitivity, and little peeling.

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Chemical Abstracts, vol. 116, No. 26, Jun. 29, 1992, “Deep UV top Surface Image Resist”, p. 693, col. 1.
International Publication No. WO 92/09934, published Jun. 11, 1992.

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