Radiation sensitive copolymers, photoresist compositions thereof

Details Radiation sensitive copolymers, photoresist compositions thereof Radiation sensitive copolymers, photoresist compositions thereof

1999-09-22

2000-12-26

Baxter, Janet

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

4302711, 430325, 526271, 526279, G03F 7004

Patent

active

061656828

ABSTRACT:
Radiation sensitive resins for use in a top layer resists in bilayer systems for use in deep UV photolithography comprises copolymers having the following structural units: ##STR1## and optionally, ##STR2## wherein n is an integer of 1 to 5, R.sup.1 is methyl or trimethylsiloxy, R.sup.2 is a tert-butyl group, R.sup.3, R.sup.4 and R.sup.5 are each independently hydrogen or a methyl group.

REFERENCES:
patent: 5360693 (1994-11-01), Sebald et al.
patent: 5843624 (1998-12-01), Houlihan et al.
patent: 6042989 (2000-03-01), Schaedeli et al.
patent: 6063543 (2000-05-01), Hien et al.
"Thermal Stability of Silicon Containing Methacrylatge Based Bilayer Resist for 193 nm Lithography", White, D. et al, Proc.SPIE-Int., 1998, 3333, 132-143.
"Dual-Wavelength Photoresist for Sub-200 nm Lithography", Hein et al. SPIE, vol. 3333, pp. 154-164. Jun. 1998.

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