Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1997-05-28
1998-04-14
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
430170, 430191, 430192, 430193, 4302711, 430325, 430326, 430330, 430905, G03F 7039, G03F 738
Patent
active
057389721
ABSTRACT:
A chemically amplified resist material comprising: a) a homopolymer or a copolymer of hydroxystyrene or hydroxystyrene partly protected by a group sensitive to an acid such as a tetrahydropyranyl or t-butoxycarbonyl group, b) a dissolution inhibitor such as poly(N,O-acetal) or phenol or bisphenol protected by a group cleavable with an acid, c) a photosensitive compound capable of generating an acid upon exposure, d) a base capable of degrading upon radiation to regulate the line width in a period between the exposure step and the processing steps after exposure, e) a low-molecular weight phenolic or polyphenolic compound having a structure represented by the following general formula or a mixture of the phenolic or polyphenolic compounds: ##STR1## where n is an integer of 1 to 5, m is an integer of 0 to 4, n+m.ltoreq.5, and p is an integer of 1 to 10, each R is a C.sub.1 -C.sub.12 alkyl group or an unsubstituted or substituted cycloalkyl group or a C.sub.1 -C.sub.5 hydroxyalkyl group, provided that hydrogen atoms may be substituted with a halogen atom and, when m is not less than 2, each R may be the same or different; A represents a hydrocarbon atomic grouping, having a valence of p, including an unsubstituted or substituted C.sub.1 -C.sub.100 alicyclic, chain aliphatic, or aromatic hydrocarbon or a combination thereof with the carbon atoms being optionally substituted with an oxygen atom, provided that when p is 1, A may represent a hydrogen atom and, when p is 2, A may represent --S--, --SO--, --SO.sub.2 --, --O--, --CO--, or a direct bond, and f) a solvent for dissolving the components a) to e).
REFERENCES:
patent: 5340682 (1994-08-01), Pawlowski et al.
patent: 5342727 (1994-08-01), Vicari et al.
patent: 5364734 (1994-11-01), Pawlowski et al.
patent: 5595855 (1997-01-01), Padmanaban et al.
patent: 5629134 (1997-05-01), Oikawa et al.
Schlegel et al., "Determination of Acid Diffusion in Chemical Amplification Positive Deep-UV Resists", Japanese Journal of Applied Physics, vol. 30, No. 11B, Nov. 1991, pp. 3132-3137.
Maruzen Petrochemical Co., Ltd., Kobunshi, vol. 38, 571 (1989).
S.A. McDonald et al., "Airborne Chemical Contamination of a Chemically Amplified Resist", SPIE vol. 1466 Advances in Resist Technology and Processing VIII (1991), pp. 2-13.
F. M. Houlihan et al., "An Evaluation of Nitrobenzyl Ester Chemistry for Chemical Amplification Resists", SPIE vol. 920 Advances in Resist Technology and Processing V (1988), pp. 67-74.
Crivello, "Possibilities for Photoimaging Using Onium Salts", Polymer Engineering and Science, Mid-December, 1983, vol. 23, No. 17, pp. 953-956.
Ito et al., "Chemical Amplification in the Design of Dry Developing Resist Materials", Polymer Engineering and Science, Dec., 1983, vol. 23, No. 18, pp. 1012-1018.
Pawloski et al., "Chemical Amplification & Dissolution Inhibition: A Novel High Performance Positive Tone Deep UV Resist", Journal of Photopolymer Science and Technology vol. 5, No. 1 (1992), pp. 55-66.
Hattori et al., "Time Delay Effect on a Positive Deep UV Resist Using Partially Tetrahydropyranyl-protected Polyvinylphenol", Journal of Photopolymer Science and Technology, vol. 6, No. 4 (1993), pp. 497-504.
Ito et al., "Approach Toward Enviromental Stabilization of Chemical Amplification Resists", Journal of Photopolymer Science and Technology, vol. 6, No. 4 (1993), pp. 547-562.
Wilson, "Organic Resist Materials-Theory and Chemistry", 1983 American Chemical Society, pp. 89-159.
Funato Satoru
Kinoshita Yoshiaki
Masuda Seiya
Okazaki Hiroshi
Padmanaban Munirathna
Chu John S.
Hoechst Japan Limited
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