Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-08-05
2008-11-18
Hoang, Quoc D (Department: 2892)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C359S565000, C359S569000, C257SE21026, C257SE21231, C257SE21238
Reexamination Certificate
active
07452820
ABSTRACT:
Disclosed are radiation-resistant zone plates for use in laser-produced plasma (LPP) devices, and methods of manufacturing such zone plates. In one aspect, a method of manufacturing a zone plate provides for forming a masking layer over a supporting membrane, and creating openings through the masking layer in a diffractive grating pattern. Such a method also provides depositing radiation absorbent material in the openings in the masking layer and on the supporting membrane, and then stripping the remaining portions of the masking layer. Then, portions of the supporting membrane not covered by the absorbent material are removed, wherein the remaining portions of the supporting membrane covered by the absorbent material form separate grates. Also in such methods, cross-members are coupled to the grates for holding positions of the grates with respect to each other.
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Alwan James J.
Bloom Scott H.
Caesar Rivise Bernstein Cohen & Pokotilow Ltd.
Gatan Inc.
Hoang Quoc D
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