Radiation resistant sram memory cell

Static information storage and retrieval – Systems using particular element – Flip-flop

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Details

365211, G11C 1140, G11C 1126, G11C 1300

Patent

active

051576252

ABSTRACT:
A memory cell employs four interconnected modules, each having two inputs and a truth table that has a logic level for input states and provides for a high impedance output state for unallowed states which differ from an allowed state by the status of one input. The interconnection is such that each module of a pair has as inputs the outputs of both members of the other pair, so that if one module changes state, the inputs to the members of the other will be in one of the unallowed states that produces a high impedance output. Thus, a radiation induced change of state in one module will not propagate through the system, but will be restored to an allowed state by action of the unaffected modules.

REFERENCES:
patent: 5111429 (1992-05-01), Whitaker

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