Radiation resistant bipolar memory

Details Radiation resistant bipolar memory Radiation resistant bipolar memory

1989-06-02

1990-09-18

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365 53, 307321, G11C 1140

Patent

active

049583204

ABSTRACT:
A bipolar memory of a construction having high immunity to soft error attributable to alpha rays is provided. The transistors of a flip flop, i.e., the essential circuitry of the memory cell, are inverted and the load device thereof has shielding means for shielding the flip flop from the noise produced within the substrate. Bipolar transistors and Schottky barrier diodes are employed as the load devices. A buried layer (ordinarily, an n type layer) and a doped layer of the reverse conductivity type (ordinarily the p type) are formed in a region where the device is provided, and a reverse bias is applied across the buried layer and the doped layer to shut off the noise produced within the substrate.

REFERENCES:
patent: 4858184 (1989-08-01), Homma et al.

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