Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-06
2005-09-06
Baumeister, Bradley (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000
Reexamination Certificate
active
06940111
ABSTRACT:
Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer protects the feature from being damaged to radiation during, for example, processing of the IC. In one embodiment, the radiation protection layer comprises a noble metal, oxides, alloys, or compounds thereof.
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Bruchhaus Rainer
Gernhardt Stefan
Nagel Nicolas
Wellhausen Uwe
Baumeister Bradley
Fenty Jesse A.
Horizon IP Pte Ltd
Infineon Technologies Aktiengesellschaft
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