Radiation-hardening of SOI by ion implantation into the buried o

Details Radiation-hardening of SOI by ion implantation into the buried o Radiation-hardening of SOI by ion implantation into the buried o

1996-05-31

1998-08-18

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

438407, 438473, H01L 2176

Patent

active

057958130

ABSTRACT:
The radiation hardness of a silicon-on-insulator structure is improved by planting dopant ions, such as Si, into the buried oxide layer. The dopant ions are implanted in the buried oxide layer, near, but not at, the active Si layer/buried oxide layer interface. This implantation creates electron traps/recombination centers in the buried oxide layer.

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