Radiation-hardening of microelectronic devices by ion implantati

Details Radiation-hardening of microelectronic devices by ion implantati Radiation-hardening of microelectronic devices by ion implantati

1998-08-13

2000-06-06

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

438407, 438473, 438DIG910, H01L 2176

Patent

active

060717912

ABSTRACT:
The radiation hardness of a microelectronic device is improved by implant dopant ions, such as Si, into an oxide layer. This implantation creates electron traps/recombination centers in the oxide layer. A subsequent anneal remove defects in the active silicon layer.

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patent: 5338693 (1994-08-01), Kinzer et al.
patent: 5589708 (1996-12-01), Kalnitsky
patent: 5795813 (1998-08-01), Hughes et al.

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