Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1989-01-31
1990-08-14
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307285, 307310, 3072961, 3072962, 3073171, 307318, 307322, 3073172, 323229, 357 12, 357 13, G05F 318
Patent
active
049489895
ABSTRACT:
A radiation-hardened temperature-compensated precision voltage reference includes two diodes connected in series having a prescribed operating current (I.sub.B) flowing therethrough. In one embodiment, a first of the two diodes comprises a reversed-biased avalanche diode (32), and a second of the two diodes comprises a forward biased Schottky diode (30). In another embodiment, a reversed biased avalanche diode (42) is connected in series with a reverse biased tunneling diode (40). Both diodes of either embodiment include opposite and offsetting temperature and neutron coefficients of voltage. A method of adjusting the temperature and neutron coefficients of at least one of the two diodes includes selectively adjusting the current density of one of the diodes by selectively trimming the area of the diode dipole.
REFERENCES:
patent: 3248572 (1966-04-01), Widmer
patent: 3502912 (1970-03-01), McAvoy
patent: 3626389 (1971-12-01), Waaben
patent: 4030023 (1977-06-01), Keith
patent: 4785230 (1988-11-01), Ovens et al.
Millman and Taub; Pulse, Digital, and Switching Waveforms; pp. 185-189 "Avalanche Diodes".
E. J. Trainor, Expanded Scale Voltmeter Western Electric Technical Digest No. 2, Apr. 1966.
Motorola Rectifier and Zener Diode Data Book, pp. 6-2, 6-3 (1982).
Fair, et al., "Zener and Avalanche Breakdown in As-Implanted Low Voltage Si n-p junctions", IEEE Trans. Elec. Devices, vol. ED-23, No. 5, pp. 512-518 (1976).
Sze, Physics of Semiconductor Devices, 2nd Ed., John Wiley & Sons, pp. 84-89 (1969).
Donovan et al., "A Survey of the Vulnerability of Comtemporary Semiconductor Components to Nuclear Radiation", Technical Report AFAL-TR-74-61, Air Force Avionics Laboratory, Wright-Patterson Air Force Base, Ohio, pp. 39-47, 170-172, 253-259 (1974).
Millward "Neutron Hardness Assurance Considerations for Temperature Compensated Reference Diode," IEEE Trans Nuclear Sci, vol. NS-25, No. 6 pp. 1517-1521 (Dec. 1978).
George et al., "Radiation Hardened O-TC Zener Diodes" Technical Report AECRL-70-0166 (Gov't Contract No. F19628-68-C-0296; Project No. 672A), 75 pages (Nov. 1969).
Cunningham T.
Miller Stanley D.
Science Applications International Corporation
LandOfFree
Radiation-hardened temperature-compensated voltage reference does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation-hardened temperature-compensated voltage reference, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation-hardened temperature-compensated voltage reference will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-464680