Radiation hardened SRAM device having cross-coupled data cells

Details Radiation hardened SRAM device having cross-coupled data cells Radiation hardened SRAM device having cross-coupled data cells

1999-11-30

2000-11-14

Tran, Andrew Q.

Static information storage and retrieval

Systems using particular element

Flip-flop

365154, 365190, G11C 11412

Patent

active

061478997

ABSTRACT:
A memory cell with increased resistance to high energy particle radiation. When a memory cell is subjected to high energy particles hit, such as may occur in outer space or in certain harsh environments, design is provided that ensures the data will be maintained in its current state. In particular, a pair of WORD lines access the memory cell such that either WORD line being enabled provides access to the data in the memory cell. The memory cell contains two data storage cells. Each data storage cell contains a pair of cross-coupled transistors which are indirectly cross-coupled to each other via an isolation device. Further, each of the two data storage cells are cross-coupled to each other to reinforce and maintain the data in the respective cross-coupled data storage cell. In the event data is at risk in one of the data storage cells, the other storage cells maintains the data at the correct level at all times. Further, the cross-coupling from one data storage cell to the other acts to restore the original data state in the cross-coupled cell once the high energy particle hit is over.

REFERENCES:
patent: 4251876 (1981-02-01), McKenny et al.
patent: 5631863 (1997-05-01), Fechner et al.
patent: 5732015 (1998-03-01), Kazerounian et al.
patent: 5905290 (1999-05-01), Houston

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