Radiation-hardened SRAM cell with write error protection

Details Radiation-hardened SRAM cell with write error protection Radiation-hardened SRAM cell with write error protection

2007-06-19

2007-06-19

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S154000

Reexamination Certificate

active

11051916

ABSTRACT:
A method and system is disclosed for preventing write errors in a Single Event Upset (SEU) hardened static random access memory (SRAM) cell. A compensating element has been connected to a feedback path of the SRAM cell. The compensating element operates to cancel out capacitive coupling generated in an active delay element of the SRAM cell. If the compensating element sufficiently cancels the effects of the capacitive coupling, a write error will not occur in the SRAM cell. The compensating element also occupies a smaller silicon area than other proposed solutions.

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