Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1999-06-04
2000-08-29
Hoang, Huan
Static information storage and retrieval
Systems using particular element
Flip-flop
365156, G11C 1100
Patent
active
061117803
ABSTRACT:
A memory device can include a radiation hardened, static random access memory (SRAM) cell having a first inverter pair including a first PFET and a first NFET coupled in series drain to drain by a resistor whose resistance can be an order of magnitude (i.e., ten times) larger than the source to drain resistance of the first PFET, a second inverter pair including a second PFET and a second NFET coupled in series drain to drain by a resistor whose resistance can be an order of magnitude larger than the source to drain resistance of the second PFET, the first or second PFET can include a P+ drain difflusion in an NWELL where a portion of the gate can overlie the P+ drain diffusion, a first pass gate PFET coupled to the gate of the first PFET, the gate of the first NFET, and the P+ drain diffusion of the second PFET, and a second pass gate PFET coupled to the gate of the second PFET, the gate of the second NFET, and the P+ drain diffusion of the first PFET.
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Hoang Huan
Lockheed Martin Corporation
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