Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-05-13
2008-08-12
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21704, C257SE27111
Reexamination Certificate
active
07411250
ABSTRACT:
A silicon-on-insulator metal oxide semiconductor device comprising ultrathin silicon-on-sapphire substrate; at least one P-channel MOS transistor formed in the ultrathin silicon layer; and N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire layer is greater than peak impurity concentration in the ultrathin silicon layer.
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Imthurn George
Lyons Eugene F.
Miscione Anthony M.
Stuber Michael A.
Dickey Thomas L.
Durant Stephen C.
Erdem Fazli
Novak Druce & Quigg LLP
Peregrine Semiconductor Corporation
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