Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Reexamination Certificate
2005-02-15
2005-02-15
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
C438S289000
Reexamination Certificate
active
06855618
ABSTRACT:
A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.
REFERENCES:
patent: 4179311 (1979-12-01), Athanas
patent: 4442591 (1984-04-01), Haken
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 4748131 (1988-05-01), Zietlow
patent: 4849366 (1989-07-01), Hsu et al.
patent: 5047356 (1991-09-01), Li et al.
patent: 5126278 (1992-06-01), Kodaira
patent: 5173438 (1992-12-01), Sandhu
patent: 5192712 (1993-03-01), Aronowitz et al.
patent: 5242849 (1993-09-01), Sato
patent: 5247199 (1993-09-01), Matlock
patent: 5358890 (1994-10-01), Sivan et al.
patent: 5429958 (1995-07-01), Matlock
patent: 5474940 (1995-12-01), Tsukamoto
patent: 5604370 (1997-02-01), Mehta et al.
patent: 6008098 (1999-12-01), Pramanick et al.
patent: 0 273 702 (1988-07-01), None
patent: 0 313 777 (1989-05-01), None
patent: WO 9005993 (1990-05-01), None
Chaffee John T.
Kerwin David B.
Tyson Scott M.
Woodruff Richard L.
Aeroflex Colorado Springs Inc.
Lee Calvin
Morgan & Finnegan L.L.P.
Smith Matthew
LandOfFree
Radiation hardened semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Radiation hardened semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation hardened semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3467773