Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Statutory Invention Registration
2005-10-04
2005-10-04
Carone, Michael J. (Department: 3641)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Statutory Invention Registration
active
H0002128
ABSTRACT:
A method of radiation hardening microcircuits including the steps of removing hydrogen from the microcircuit in a vacuum furnace and annealing in deuterium-containing forming gas.
REFERENCES:
patent: 5872387 (1999-02-01), Lyding et al.
patent: 6159829 (2000-12-01), Warren et al.
patent: 6328801 (2001-12-01), Gary et al.
I.C. Kizilyalli et al., “Deuterium Post-Metal Annealing of MOSFET's for Improved Hot Carrier Reliability”, IEEE Electron Device Letters, vol. 18, No. 3, Mar. 1997, pp. 81-83.
Chavez Joseph R.
Devine Roderick Anthony Blunden
Callahan Kenneth E.
Carone Michael J.
Skorich James M.
The United States of America as represented by the Secretary of
Thomson M.
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