Radiation-hardened memory storage device for space applications

Details Radiation-hardened memory storage device for space applications Radiation-hardened memory storage device for space applications

1991-11-29

1994-05-24

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Flip-flop

357297, 357372, H01L 2712

Patent

active

053155440

ABSTRACT:
A radiation-hard dynamic random access memory (DRAM) device having reduced sensitivity to single event upset and latchup. The radiation-hard DRAM device includes a high-density configuration of transistors that have undergone neutron bombardment. The high-density configuration of transistors reduces sensitivity to single event upset, but increases sensitivity to latchup. Neutron bombardment reduces the increased sensitivity to single event latchup to effectively provide permanent latchup immunity.

REFERENCES:
patent: 4805148 (1989-02-01), Diehl-Nagle et al.
patent: 4866498 (1989-09-01), Myers
patent: 4931990 (1990-06-01), Perkin
patent: 4983843 (1991-01-01), Thomson
patent: 5107459 (1992-04-01), Chu et al.

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