Radiation hardened field dielectric utilizing BPSG

Details Radiation hardened field dielectric utilizing BPSG Radiation hardened field dielectric utilizing BPSG

1990-10-18

1993-08-10

Pascal, Robert J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257372, 257644, 257650, H01L 2978

Patent

active

052352021

ABSTRACT:
A radiation hardened MOSFET is fabricated by forming a dielectric layer of boro-phosphosilicate glass (BPSG) over the field oxide layer of the MOSFET. The BPSG covers only a small part of the gate electrode of the MOSFET. The gate electrode of the MOSFET is formed from two layers of polycrystalline silicon so as to prevent contamination of the gate oxide by the BPSG dopants.

REFERENCES:
patent: 4291322 (1981-09-01), Clemens et al.
patent: 4807016 (1989-02-01), Douglas

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