Radiation hardened bipolar static RAM cell

Details Radiation hardened bipolar static RAM cell Radiation hardened bipolar static RAM cell

1987-01-15

1989-09-05

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365179, G11C 1140

Patent

active

048645397

ABSTRACT:
This invention relates generally to Static Random Access Memory (SRAM) cells and more particularly, relates to a SRAM cell wherein soft-error due to .alpha.-particle radiation is reduced by permitting the potential at the common-emitter node of the cross-coupled transistors of the memory cell to swing freely. Still more particularly, it relates to a SRAM cell wherein the common-emitter node of the cell is decoupled from a heavily capacitively loaded word line with its common constant current source by means of a constant current source or current mirror disposed in each cell between the common-emitter node and the word line.

REFERENCES:
patent: 4255674 (1981-03-01), Grenier et al.
patent: 4314359 (1982-02-01), Kato et al.
patent: 4322821 (1982-03-01), Lohstroh
patent: 4541003 (1985-09-01), Otsuka et al.
IBM Technical Disclosure Bulletin-vol. 21, No. 1 Jun. 1978; p. 175-176.
K. Yamaguchi et al, IEEE Dig. of ISSCC, 1986 pp. 214-215 "A 3.5 NS 2W 20 mm.sup.2 16 Kb bipolar RAM".
Y. Nakase et al, Dig. of VLSI Tech. Sym. pp. 75-76, 1986 "A double wordline structure in ECL RAM".
"Soft Error Rates in Static Bipolar RAMs2" by Sai-Halasz et al, Proceedings of the IEEE International Electron Devices Meeting, Dec. 1983 pp. 344-347.

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