Radiation hard memory cell having monocrystalline and non-monocr

Details Radiation hard memory cell having monocrystalline and non-monocr Radiation hard memory cell having monocrystalline and non-monocr

1988-09-12

1989-10-03

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365 53, 365190, 357 41, 307279, G11C 1100, G11C 702, H03K 326, H01L 2702

Patent

active

048721417

ABSTRACT:
A radiation hard memory cell comprises on an insulating substrate a low output impedance inverter made of a monocrystalline semiconductor and a high output impedance inverter made of a non-crystalline semiconductor in order to save space. The semiconductor can be Si and a barrier layer can be used. A method for making the cell comprises depositing and defining active layers, making gate insulating layers on the active layers, forming gates on the insulating layers, and forming source and drain regions in the active layers. One inverter can have its active and insulating layers formed before the remaining active layer is formed. The remaining active layer can then be simultaneously formed with the gate of the one active layer.

REFERENCES:
patent: 4063225 (1977-12-01), Stewart
patent: 4425574 (1984-01-01), Silvestri et al.
patent: 4760557 (1988-07-01), Stewart et al.
S. D. S. Malhi et al., "Edge-Defined Self-Alignment of Submicrometer Overlaid Devices," IEEE Electron Device Letters, vol. EDL-5, No. 10, Oct. 1984, pp. 428-429.
K. Ochii et al., "An Ultralow Power 8K.times.8-Bit Full CMOS RAM with a Six-Transistor Cell," IEEE Journal of Solid-State Circuits, vol. SC-17, No. 5, Oct. 1982, pp. 798-803.

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