Radiation hard memory cell and array thereof

Details Radiation hard memory cell and array thereof Radiation hard memory cell and array thereof

1977-01-03

1978-12-19

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Flip-flop

307279, 365156, 365190, G11C 1140, G11C 702

Patent

active

041308921

ABSTRACT:
A memory cell configuration that is implemented to be relatively hard to the adverse effects of a nuclear event. The presently disclosed memory cell can be interconnected with other like memory cells to form a high speed radiation hard register file. Information is selectively written into and read out of a memory cell comprising the register file, which memory cell preserves previously stored data without alteration in the event of exposure to high levels of nuclear radiation.

REFERENCES:
patent: 2706811 (1955-04-01), Steele
patent: 3636527 (1972-01-01), Zuk
patent: 3731119 (1973-05-01), Matzen
patent: 3980899 (1976-09-01), Shimada et al.
patent: 4038567 (1977-07-01), Lewis et al.
Arzubi, Write/Sense Scheme for Monolithic Memories, IBM Technical Disclosure Bulletin,vol. 18, No. 8, 1/76, pp. 2450-2451.

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