Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-04-24
2007-04-24
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S50400H, C250S493100, C378S119000, C355S053000
Reexamination Certificate
active
10890381
ABSTRACT:
A device for generating radiation source based on a discharge includes a cathode and an anode. The cathode and anode material are supplied in fluid state. The material forms a plasma pinch when the device is in use. Optionally, nozzles may be used to supply the material. The cathode and/or anode may form a flat surface. The trajectories of the material may be elongated. A laser may be used to cause the discharge more easily. The laser may be directed on the anode of cathode or on a separate material located in between the anode and cathode.
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Korean Office Action issued in Korean Application No. 10-2005-0063573 dated Aug. 28, 2006.
Gayazov Robert Rafilevitch
Ivanov Vladimir Vital'evitch
Korob Evgenii Dmitreevitch
Koshelev Konstantin Nikolaevitch
Krivtsum Vladimir Mihailovitch
ASML Netherlands B.V.
Nguyen Kiet T.
Pillsbury Winthrop Shaw & Pittman LLP
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