Radiation-emitting semiconductor element and method for...

Details Radiation-emitting semiconductor element and method for... Radiation-emitting semiconductor element and method for...

2005-04-12

2005-04-12

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S025000, C438S026000, C438S027000, C438S029000, C257S094000, C257S095000, C257S096000, C257S097000, C257S098000

Reexamination Certificate

active

06878563

ABSTRACT:
This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.

REFERENCES:
patent: 5157468 (1992-10-01), Matsumoto
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5625202 (1997-04-01), Chai
patent: 5661074 (1997-08-01), Tischler
patent: 5780873 (1998-07-01), Itaya et al.
patent: 5786606 (1998-07-01), Nishio et al.
patent: 5862167 (1999-01-01), Sassa et al.
patent: 5874747 (1999-02-01), Redwing et al.
patent: 5928421 (1999-07-01), Yuri et al.
patent: 6060335 (2000-05-01), Rennie et al.
patent: 2915888 (1979-10-01), None
patent: 40 38216 (1991-07-01), None
patent: 43 05296 (1994-08-01), None
patent: 690 08931 (1994-12-01), None
patent: 19753492 (1998-09-01), None
patent: 19830838 (1999-01-01), None
patent: 19741442 (1999-04-01), None
patent: 19921987 (1999-11-01), None
patent: 19838810 (2000-03-01), None
patent: 10000088 (2000-08-01), None
patent: 0 356 037 (1990-02-01), None
patent: 0 404 565 (1990-12-01), None
patent: 07221347 (1995-08-01), None
patent: 080322116 (1996-02-01), None
patent: 08064910 (1996-03-01), None
patent: 08116090 (1996-05-01), None
patent: 0 740 376 (1996-10-01), None
patent: 0 810 674 (1997-12-01), None
patent: 10209494 (1998-08-01), None
patent: 0 871 228 (1998-10-01), None
patent: 0 896 405 (1999-02-01), None
patent: 0905797 (1999-03-01), None
patent: 0 905 797 (1999-03-01), None
patent: 11068157 (1999-03-01), None
patent: 11150297 (1999-06-01), None
patent: 11191641 (1999-07-01), None
patent: 004223330 (1992-08-01), None
patent: 10150220 (1998-06-01), None
patent: 10-290027 (1998-10-01), None
patent: 110744558 (1999-03-01), None
patent: WO 9213363 (1992-08-01), None
patent: WO 9748138 (1997-12-01), None
Mensz, P.M. et al. “InxGa1-xN/AlyGa1-yN Violet Light Emitting Diodes with Reflective P-contacts for High Single Sided Light Extarction”,Electronics Leters, vol. 33, No. 24, pp. 2066-2068; 1997.
Schnitzer, I. et al.:“30% external quantum efficiency from surface textured, thin-film light-emitting diodes”, Appl. Phys. Lett. 63 (16), Oct. 1993, S. 2174.

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