Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-05-24
2005-05-24
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S098000, C257S094000
Reexamination Certificate
active
06897488
ABSTRACT:
A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).
REFERENCES:
patent: 3852798 (1974-12-01), Leabailly et al.
patent: 4398239 (1983-08-01), de Vos et al.
patent: 5055892 (1991-10-01), Gardner et al.
patent: 5087949 (1992-02-01), Haitz
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5349211 (1994-09-01), Kato
patent: 5429954 (1995-07-01), Gerner
patent: 5521747 (1996-05-01), Engle
patent: 5923053 (1999-07-01), Jakowetz et al.
patent: 6025251 (2000-02-01), Jakowetz et al.
patent: 6255707 (2001-07-01), Bylsma et al.
patent: 6426787 (2002-07-01), Satake et al.
patent: 20020030194 (2002-03-01), Camras et al.
patent: 944 387 (1956-06-01), None
patent: 25 38 248 (1975-08-01), None
patent: 195 36 438 (1995-09-01), None
patent: 0 415 640 (1991-03-01), None
patent: 0 562 880 (1993-09-01), None
patent: 59-205774 (1983-05-01), None
patent: 61-110476 (1984-11-01), None
patent: 06338630 (1994-12-01), None
patent: 07038147 (1995-02-01), None
patent: WO 9637000 (1996-11-01), None
S.V. Galginaitis, “Improving the External Efficiency of Electroluminescent Diodes”, Journal of Applied Physics, vol. 36, No. 2, Feb. 1965, pp. 460-461.
Baur Johannes
Eisert Dominik
Fehrer Michael
Hahn Berthold
Härle Volker
Cohen & Pontani, Lieberman & Pavane
Ho Tu-Tu
Nelms David
Osram Opto Semiconductors GmbH
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