Capacitor and method for fabricating the same

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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C361S312000, C029S025410, C257S295000

Reexamination Certificate

active

06891715

ABSTRACT:
A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.

REFERENCES:
patent: 5973911 (1999-10-01), Nishioka
patent: 6072689 (2000-06-01), Kirlin
patent: 6184927 (2001-02-01), Kang
patent: 6597029 (2003-07-01), Kim et al.
patent: 11-8355 (1999-01-01), None
patent: 2001-267519 (2001-09-01), None

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