Radial epitaxial reactor for multiple wafer growth

Details Radial epitaxial reactor for multiple wafer growth Radial epitaxial reactor for multiple wafer growth

1991-09-25

1994-01-04

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156611, 156612, 156613, 156614, C30B 2514

Patent

active

052756866

ABSTRACT:
An improved gas distribution scheme for a multi-wafer radially injected convergent horizontal epitaxial reactor which includes two outer distribution rings, an outer injection ring, an annular susceptor, and a central exhaust tube. The converging path of the gas stream from the outer injection ring into the central exhaust tube compensates for depletion of the reactant gases along the substrate. The injector ring has a large number of evenly spaced diffuser orifices that allow the gas to expand into the growth chamber in a laminar flow pattern. The design is compact, includes the possibility of water cooling of the quartz during deposition, and allows for a resistive bakeout furnace which can be used to etch and clean the reaction chamber between runs.

REFERENCES:
patent: 4203387 (1980-05-01), McMullen et al.
patent: 4518455 (1985-05-01), Muething
patent: 4649859 (1987-03-01), Wanlass
patent: 4907534 (1990-03-01), Huang et al.
patent: 4961399 (1990-10-01), Frijlink
patent: 5096534 (1992-03-01), Ozias

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