Radhard mosfet with thick gate oxide and deep channel region

Details Radhard mosfet with thick gate oxide and deep channel region Radhard mosfet with thick gate oxide and deep channel region

1996-07-25

1998-11-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257401, 257409, 257285, 257286, H01L 2126, H01L 29205

Patent

active

058313184

ABSTRACT:
A process for producing a radiation resistant power MOSFET is disclosed. The gate oxide is formed toward the end of the processing and is not exposed to substantial thermal cycling. The gate oxide thickness is increased to more than 1250 .ANG. for a device with a reverse voltage rating of 250 volts and the channel concentration is reduced to maintain a low threshold voltage. The thicker oxide prevents single event damage under reverse bias voltage.

REFERENCES:
patent: 3799813 (1974-03-01), Danchenko
patent: 4295264 (1981-10-01), Rogers
patent: 4327475 (1982-05-01), Asai et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4495513 (1985-01-01), Descamps
patent: 4502069 (1985-02-01), Schuh
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4597824 (1986-07-01), Shinada et al.
patent: 4599118 (1986-07-01), Han et al.
patent: 4672407 (1987-06-01), Nakagawa et al.
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4710478 (1987-12-01), Yoder et al.
patent: 4721990 (1998-01-01), Kinoshita
patent: 5338693 (1994-08-01), Klinzer et al.
patent: 5475252 (1995-12-01), Merrill et al.
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5661322 (1997-08-01), Williams et al.
Silicon processing for the VLSI ERA, V2 Stanley Wolf, 1990.
HEXFETS Databook of 1985, published by the International Rectifier Corporation of El Segundo, CA pp. B-10 through B-12.
W.R. Dawes, Jr. et al. "Transient Hardened Power FETS", presented at the Nuclear Space and Radiation Effets Conference, sponsored by IEEE, Jul. 20-24, 1986, pp. 1-7.
G.B. Roper et al. "Development of a Radiation Hard N-Channel Power MOSFET," IEEE Transactions on Nuclear Science, vol. NS-30, No. 6, (Dec. 1983) pp. 4110-4115.
A. Bindra, "Rad-Hard Power MOSFETs", Electronic Engineering Letters, (Jan. 1987).
"Unveils Rad-Hard MOSFETs", Electronic Buyers' News, Jan. 12, 1987, p. 12.
D. Tunick, "Failure Mechanisms Probed for Rad-Hard Power MOSFETs", Electronic Design (Nov. 1986).
J.L. Titus, et al., "Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETs: Development of a Semi-Empirical Expression", submitted for publication in IEEE Trans. on Nucl. Sci. (1995).
B. Jayant Baliga, "Modern Power Devices", John Wiley & Sons, 1987, pp. 29, 314-315.

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