R.F. plasma reactor with larger-than-wafer pedestal conductor

Details R.F. plasma reactor with larger-than-wafer pedestal conductor R.F. plasma reactor with larger-than-wafer pedestal conductor

1995-03-08

1997-11-18

Tung, T.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

1566431, 1566461, 216 67, H01L 2100

Patent

active

056883587

ABSTRACT:
A pedestal for supporting a semiconductor substrate in an R.F. plasma reactor chamber includes a conductive disk platen having a diameter exceeding the diameter of the substrate so that an outer annular portion of the conductive disk platen provides a direct path of R.F. power from the plasma while a remaining inner portion of the conductive disk provides a path of R.F. power from the plasma through the substrate, an etch-resistant cover shielding the conductive platen from the plasma, a portion of the etch-resistant layer underlying the substrate, the etch-resistant cover including a raised disk overlying a central portion of the conductive disk platen and underlying the substrate and having a diameter less than the diameter of the substrate so that a peripheral portion of the substrate extends beyond the circumference of the raised disk, a recessed ring annulus overlying an outer portion of the conductive disk platen and having a top surface which is depressed below a top surface of the raised disk, an inner portion of the recessed ring annulus underlying the peripheral portion of the substrate, leaving a top portion of a side wall of the raised disk exposed to the plasma.

REFERENCES:
patent: 4844775 (1989-07-01), Keeble
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5292399 (1994-03-01), Lee et al.
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5384008 (1995-01-01), Sinha et al.
patent: 5401356 (1995-03-01), Enami et al.
patent: 5498313 (1996-03-01), Bailey et al.

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