Quasi-vertical semiconductor component

Details Quasi-vertical semiconductor component Quasi-vertical semiconductor component

2007-08-07

2007-08-07

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S339000, C257S401000

Reexamination Certificate

active

10667629

ABSTRACT:
A quasi-vertical semiconductor component in which, by variation of the layout, the process or the wiring of inner cells, a compensation for a voltage drop along a buried layer is provided in order thus to ensure a similar operating point of the individual inner cells in the well. Therefore, the disadvantages brought about by a voltage drop in the buried layer are ultimately overcome.

REFERENCES:
patent: 5589405 (1996-12-01), Contiero et al.
patent: 5635742 (1997-06-01), Hoshi et al.
patent: 5672528 (1997-09-01), Disney et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6657255 (2003-12-01), Hshieh et al.
Murari, B. et al. (Eds.): “Smart Power ICs—Technologies and Applications”, Springer Verlag, p. 20, pp. 20 and 32-36, Jun. 13, 2002.

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