Quasi-vertical gated NPN-PNP ESD protection device

Details Quasi-vertical gated NPN-PNP ESD protection device Quasi-vertical gated NPN-PNP ESD protection device

2011-06-28

2011-06-28

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S500000, C257S170000, C257S409000, C257SE29012

Reexamination Certificate

active

07968936

ABSTRACT:
Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed adjacent to a deep well having another conductivity type. The device has a desired holding voltage and a substantially homogenous current flow, and is thus highly robust. The device can be fashioned in a cost effective manner by being formed during a BiCMOS or Smart Power fabrication process.

REFERENCES:
patent: 5504362 (1996-04-01), Pelella et al.
patent: 2004/0108567 (2004-06-01), Denison et al.
“Moving Current Filaments in ESD Protection Devices and Their Relation to Electrical Characteristics”, D. Pogany, S. Bychikhin, E. Gornik, M. Denison, N. Jensen, G. Groos and M. Stecher, Proceedings of the IRPS 2003, Dallas, Texas, 8 pgs.
“SCR-LDMOS—A Novel LDMOS Device with ESD Robustness”, Sameer Pendharkar, Ross Teggatz, Joe Devore, John Carpenter, Taylor Efland and Chin-Yu Tsai, Proceedings of the ISPSD 2000, Toulouse, France, 4 pgs.
“Effects of Hot Spot Hopping and Drain Ballasting in Integrated Vertical DMOS Devices Under TLP Stress”, P. Moens, S. Bychikhin, K. Reynders, D. Pogany and M. Zubeidat, Proceedings of the IRPS 2004, Phoenix, USA pp. 393-398.
“Hot Spot Dynamics in Quasi Vertical DMOS Under ESD Stress”, Marie Denison, Matej Blaho, Dieter Silber, Joachim Joos, Nils Jensen, Matthias Stecher, Viktor Dubec, Dionyz Pogany and Erich Gornik, Proceedings of the ISPSD 2003, Cambridge, UK, 4 pgs.
“Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress”, Marie Denison, Matej Blaho, Pavel Rodin, Viktor Dubec, Dionyz Pogany, Dieter Silber Erich Gornik and Matthias Stecher, IEEE Transactions on electron Devices, vol. 51, No. 10, Oct. 2004, 9 pgs.

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